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2SC1815 PBFREE

2SC1815 PBFREE

  • 厂商:

    CENTRAL(中环)

  • 封装:

    -

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
2SC1815 PBFREE 数据手册
2SC1815 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VEBO IC PD TJ, Tstg JA 60 UNITS V 50 V 5.0 V 150 mA 400 mW -55 to +125 °C 250 °C/W ELECTRICAL SYMBOL ICBO ICEO CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=60V VCE=50V MAX 100 UNITS nA 100 nA IEBO VEB=5.0V 100 nA BVCBO IC=100μA 60 V BVCEO IC=100μA 50 V BVEBO IE=100μA 5.0 V VCE(SAT) VBE(SAT) IC=100mA, IB=10mA IC=100mA, IB=10mA VBE IE=310mA hFE hFE VCE=6.0V, IC=2.0mA (2SC1815) VCE=6.0V, IC=2.0mA (2SC1815-O) 70 700 70 140 hFE VCE=6.0V, IC=2.0mA (2SC1815-Y) VCE=6.0V, IC=2.0mA (2SC1815-GR) 120 240 200 400 350 700 hFE hFE fT VCE=6.0V, IC=2.0mA (2SC1815-BL) VCE=10V, IC=1.0mA, f=30MHz 80 0.25 V 1.0 V 1.45 V MHz R1 (10-May 2018) 2SC1815 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (10-May 2018) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)
2SC1815 PBFREE
物料型号:2SC1815、2SC1815-O、2SC1815-Y、2SC1815-GR、2SC1815-BL

器件简介:CENTRAL SEMICONDUCTOR 2SC1815系列是硅NPN晶体管,采用外延平面工艺制造,设计用于通用放大器应用。


引脚分配:1) 发射极 2) 集电极 3) 基极

参数特性: - 最大集电极-基极电压:VCBO 60V - 最大集电极-发射极电压:VCEO 50V - 最大发射极-基极电压:VEBO 5.0V - 集电极电流(连续):IC 150mA - 功率耗散:PD 400mW - 工作和存储结温:TJ.Tstg -55至+125°C - 热阻:eJA 250°C/W

功能详解: - 直流电流增益hFE:在VCE=6.0V, Ic=2.0mA条件下,不同型号的hFE值在70至700之间。

- 截止频率fT:在VcE=10V, Ic=1.0mA, f=30MHz条件下,fT值为80MHz。


应用信息:适用于通用放大器应用。


封装信息:TO-92封装,具体尺寸数据以英寸和毫米为单位列出,包括封装直径、高度等。


以上信息摘自CENTRAL SEMICONDUCTOR的PDF文档。
2SC1815 PBFREE 价格&库存

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2SC1815 PBFREE
  •  国内价格 香港价格
  • 1+7.277111+0.87010
  • 5+6.426545+0.76840
  • 25+5.7649825+0.68930
  • 100+5.29244100+0.63280

库存:1829